Chapter 7: Diffusion
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Chapter 7: Diffusion
ISSUES TO ADDRESS...
• How does diffusion occur?
• Why is it an important part of processing?
• How can the rate of diffusion be predicted for some simple cases?
• How does diffusion depend on structure and temperature?
AMSE 205 Spring ‘2016
Chapter 7 - 1
Diffusion
Diffusion - Mass transport by atomic motion
Mechanisms • Gases & Liquids – random (Brownian) motion • Solids – vacancy diffusion or interstitial diffusion
AMSE 205 Spring ‘2016
Chapter 7 - 2
Diffusion
• Interdiffusion: In an alloy, atoms tend to migrate
from regions of high conc. to regions of low conc.
Initially
After some time
Figs. 7.1 & 7.2, Callister & Rethwisch 9e.
AMSE 205 Spring ‘2016
Chapter 7 - 3
Diffusion
• Self-diffusion: In an elemental solid, atoms
also migrate.
Label some atoms
C
After some time
C
A
D
A
D
B
B
AMSE 205 Spring ‘2016
Chapter 7 - 4
Diffusion Mechanisms
Vacancy Diffusion:
• atoms exchange with vacancies • applies to substitutional impurities atoms • rate depends on:
-- number of vacancies -- activation energy to exchange.
increasing elapsed time
AMSE 205 Spring ‘2016
Chapter 7 - 5
Diffusion Mechanisms
• Interstitial diffusion – smaller atoms can diffuse between atoms.
Fig. 7.3 (b), Callister & Rethwisch 9e.
More rapid than vacancy diffusion
AMSE 205 Spring ‘2016
Chapter 7 - 6
Processing Using Diffusion
• Case Hardening:
-- Diffuse carbon atoms into the host iron atoms at the surface.
-- Example of interstitial diffusion is a case hardened gear.
Chapter-opening photograph, Chapter 7, Callister & Rethwisch 9e.
(Courtesy of Surface Division, Midland-Ross.)
• Result: The presence of C atoms makes iron (steel) harder.
AMSE 205 Spring ‘2016
Chapter 7 - 7
Processing Using Diffusion
• Doping silicon with phosphorus for n-type semiconductors:
• Process:
0.5 mm
1. Deposit P rich layers on surface.
magnified image of a computer chip
silicon
2. Heat it.
3. Result: Doped semiconductor regions.
light regions: Si atoms
silicon
light regions: Al atoms
Adapted from Figure 19.27, Callister & Rethwisch 9e. AMSE 205 Spring ‘2016
Chapter 7 - 8
Diffusion
• How do we quantify the amount or rate of diffusion?
• Measured empirically
– Make thin film (membrane) of known cross-sectional area – Impose concentration gradient – Measure how fast atoms or molecules diffuse through the
membrane
M= mass diffused
J slope time
AMSE 205 Spring ‘2016
Chapter 7 - 9
Steady-State Diffusion
Rate of diffusion independent of time Flux proportional to concentration gradient =
C1 C1
Fickʼs first law of diffusion
C2 C2 x1 x2
x
D diffusion coefficient
AMSE 205 Spring ‘2016
Chapter 7 - 10
ISSUES TO ADDRESS...
• How does diffusion occur?
• Why is it an important part of processing?
• How can the rate of diffusion be predicted for some simple cases?
• How does diffusion depend on structure and temperature?
AMSE 205 Spring ‘2016
Chapter 7 - 1
Diffusion
Diffusion - Mass transport by atomic motion
Mechanisms • Gases & Liquids – random (Brownian) motion • Solids – vacancy diffusion or interstitial diffusion
AMSE 205 Spring ‘2016
Chapter 7 - 2
Diffusion
• Interdiffusion: In an alloy, atoms tend to migrate
from regions of high conc. to regions of low conc.
Initially
After some time
Figs. 7.1 & 7.2, Callister & Rethwisch 9e.
AMSE 205 Spring ‘2016
Chapter 7 - 3
Diffusion
• Self-diffusion: In an elemental solid, atoms
also migrate.
Label some atoms
C
After some time
C
A
D
A
D
B
B
AMSE 205 Spring ‘2016
Chapter 7 - 4
Diffusion Mechanisms
Vacancy Diffusion:
• atoms exchange with vacancies • applies to substitutional impurities atoms • rate depends on:
-- number of vacancies -- activation energy to exchange.
increasing elapsed time
AMSE 205 Spring ‘2016
Chapter 7 - 5
Diffusion Mechanisms
• Interstitial diffusion – smaller atoms can diffuse between atoms.
Fig. 7.3 (b), Callister & Rethwisch 9e.
More rapid than vacancy diffusion
AMSE 205 Spring ‘2016
Chapter 7 - 6
Processing Using Diffusion
• Case Hardening:
-- Diffuse carbon atoms into the host iron atoms at the surface.
-- Example of interstitial diffusion is a case hardened gear.
Chapter-opening photograph, Chapter 7, Callister & Rethwisch 9e.
(Courtesy of Surface Division, Midland-Ross.)
• Result: The presence of C atoms makes iron (steel) harder.
AMSE 205 Spring ‘2016
Chapter 7 - 7
Processing Using Diffusion
• Doping silicon with phosphorus for n-type semiconductors:
• Process:
0.5 mm
1. Deposit P rich layers on surface.
magnified image of a computer chip
silicon
2. Heat it.
3. Result: Doped semiconductor regions.
light regions: Si atoms
silicon
light regions: Al atoms
Adapted from Figure 19.27, Callister & Rethwisch 9e. AMSE 205 Spring ‘2016
Chapter 7 - 8
Diffusion
• How do we quantify the amount or rate of diffusion?
• Measured empirically
– Make thin film (membrane) of known cross-sectional area – Impose concentration gradient – Measure how fast atoms or molecules diffuse through the
membrane
M= mass diffused
J slope time
AMSE 205 Spring ‘2016
Chapter 7 - 9
Steady-State Diffusion
Rate of diffusion independent of time Flux proportional to concentration gradient =
C1 C1
Fickʼs first law of diffusion
C2 C2 x1 x2
x
D diffusion coefficient
AMSE 205 Spring ‘2016
Chapter 7 - 10
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